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 VKI 50-06P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability Square RBSOA
Preliminary data sheet
F10 A1 A4 D4 N9 L9 O7 S18 H13 X18 T16 K10 K13 NTC
IC25 = 42.5 A = 600 V VCES VCE(sat) typ. = 2.4 V
P18
B3
Pin arangement see outlines
IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 33 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 33 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 600 20 42.5 29 60 VCES 10 130 V V A A A s W
Features * NPT IGBT technology * low saturation voltage * low switching losses * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate
Advantages * space savings * reduced protection circuits * package designed for wave soldering
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.4 2.9 4.5 2.9 6.5 0.6 1.7 100 50 50 270 40 1.4 1.0 16 1.92 V V V mA mA nA ns ns ns ns mJ mJ nF 0.96 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.7 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
Typical Applications * motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding * supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
1-4
237
VKI 50-06P1
Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = 400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Dimensions in mm (1 mm = 0.0394")
Maximum Ratings 30 19 A A
Characteristic Values min. typ. max. 2.57 1.8 7 50 4.6 2.84 V V A ns 2.3 K/W K/W
B3
Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Conditions T = 25C Characteristic Values min. typ. max. 455 470 3474 485 k K
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
2-4
237
VKI 50-06P1
90
A 75 IC
90 A 75
VGE= 17V 15V 13V
IC 60
TJ = 25C 11V
60 45 30 15 0 0
VGE = 17 V 15 V 13 V 11V
45 30
TJ = 125C
9V
25T60
9V
15 0
25T60
1
2
3
4
VCE
5
V
6
0
1
2
3
4
VCE
5V
6
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
A 75 IC
VCE = 20V
90 A 75 IF 60 45
TJ = 125C TJ = 25C
60 45 30
TJ = 125C TJ = 25C
30 15
25T60
15 0 4 6 8 10 12
VGE
0
25T60
14 V 16
0,0
0,5
1,0
VF
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
50
A 40 IRM
20
V
150 120 ns 90
TJ = 125C VR = 300 V IF = 30 A IRM
15
VGE
trr
trr
30 10
VCE = 300 V IC = 30 A
20 10
25T60
60 30
25T60
5
0 0 40 80 120 nC
QG
0 0 200 400 600
-di/dt
0
160
800 A/s
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
237
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
3-4
VKI 50-06P1
8
VCE = 300V mJ VGE = 15V
80 tr td(on) Eon ns 60 t 40 Eoff
2,0
mJ
Eoff
400 ns 300
Eon
R = 33 6G TVJ = 125C
1,5
VCE = 300V VGE = 15V
t td(off) 200
4
1,0 RG = 33
TVJ = 125C
2
20
0,5
tf
100
0 0 20 40
IC
25T60
0
0,0
0 20 40 IC
25T60
0
60 A
60 A
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
80 ns
Eon
VCE = 300V mJ VGE = 15V IC = 30A 3 T = 125C VJ
4
td(on)
2,0
VCE = 300 V mJ V = 15 V GE IC = 30 A 1,5 TVJ = 125C
400 td(off) ns 300 Eoff t
tr Eon
60
t
Eoff
2
1,0
40
200
1
0,5
tf
100
0 0 10 20 30 40 50
RG
25T60
60
70 80
20
0,0 0 10 20 30 40 50
RG
25T60
60
70 80
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W ZthJC 1
IGBT diode
80
A ICM
60
0,1
40
0,01
20
RG = 33 TVJ = 125C
single pulse
0,001
25T60
0 0 100 200 300 400 500 600
VCE
700 V
0,0001 0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
4-4
237


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